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IXDD404PI / 404SI / 404SI-16
4 Amp Dual Low-Side Ultrafast MOSFET Driver
Features
* Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes * Latch-Up Protected * High Peak Output Current: 4A Peak * Wide Operating Range: 4.5V to 25V * Ability to Disable Output under Faults * High Capacitive Load Drive Capability: 1800pF in <15ns * Matched Rise And Fall Times * Low Propagation Delay Time * Low Output Impedance * Low Supply Current * Two identical drivers in single chip
General Description
The IXDD404 is comprised of two 4 Amp CMOS high speed MOSFET drivers. Each output can source and sink 4 A of peak current while producing voltage rise and fall times of less than 15ns to drive the latest IXYS MOSFETS & IGBT's. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction/current shootthrough is virtually eliminated in the IXDD404. Improved speed and drive capabilities are further enhanced by very low, matched rise and fall times. Additionally, each driver in the IXDD404 incorporates a unique ability to disable the output under fault conditions. When a logical low is forced into the Enable input of a driver, both of it's final output stage MOSFETs (NMOS and PMOS) are turned off. As a result, the respective output of the IXDD404 enters a tristate mode and achieves a Soft Turn-Off of the MOSFET/ IGBT when a short circuit is detected. This helps prevent damage that could occur to the MOSFET/IGBT if it were to be switched off abruptly due to a dv/dt over-voltage transient. The IXDD404 is available in the standard 8 pin P-DIP (PI), SOP-8 (SI) and SOP-16 (SI-16) packages.
Applications
* * * * * * * * * * Driving MOSFETs and IGBTs Limiting di/dt under Short Circuit Motor Controls Line Drivers Pulse Generators Local Power ON/OFF Switch Switch Mode Power Supplies (SMPS) DC to DC Converters Pulse Transformer Driver Class D Switching Amplifiers
Figure 1 - Functional Diagram
Vcc
200k ENA
OUTA
INB 200k ENB OUTB
GND
Copyright (c) IXYS CORPORATION 2001
First Release
IXDD404PI/404SI/404SI-16
Absolute Maximum Ratings (Note 1)
Parameter Supply Voltage All Other Pins Junction Temperature Storage Temperature Lead Temperature (10 sec) Value 25 V -0.3 V to VCC + 0.3 V 150 oC -65 oC to 150 oC 300 oC
Operating Ratings
Parameter Operating Temperature Range Thermal Impedance (To Ambient) 8 Pin PDIP (PI) (JA) 8 Pin SOIC (SI) (JA) 16 Pin SOIC (SI-16) (JA) Value -40 oC to 85 oC 120 oC/W 110 oC/W 110 oC/W
Electrical Characteristics
Unless otherwise noted, TA = 25 oC, 4.5V VCC 25V . All voltage measurements with respect to GND. IXDD404 configured as described in Test Conditions. All specifications are for one channel.
Symbol VIH VIL VIN IIN VOH VOL ROH ROL IPEAK IDC VEN VENH VENL tR tF tONDLY tOFFDLY tENOH tDOLD VCC ICC
Parameter High input voltage Low input voltage Input voltage range Input current High output voltage Low output voltage Output resistance @ Output high Output resistance @ Output Low Peak output current Continuous output current Enable voltage range High En Input Voltage Low En Input Voltage Rise time Fall time On-time propagation delay Off-time propagation delay Enable to output high delay time Disable to output low Disable delay time Power supply voltage Power supply current
Test Conditions
Min 3.5
Typ
Max 0.8
Units V V V A V
-5 0V VIN VCC -10 VCC - 0.025
VCC + 0.3 10
0.025 IOUT = 10mA, VCC = 18V IOUT = 10mA, VCC = 18V VCC is 18V 1.5 1.5 4 1 - 0.3 2/3 Vcc 1/3 Vcc CL=1800pF Vcc=18V CL=1800pF Vcc=18V CL=1800pF Vcc=18V CL=1800pF Vcc=18V 11 12 33 28 12 14 34 30 15 17 38 35 30 30 4.5 VIN = 3.5V VIN = 0V VIN = + VCC 18 1 0 200 25 3 10 10 Vcc + 0.3 3 3
V A A V V V ns ns ns ns ns ns V mA A A k
REN
Enable Pull-up Resistor
2
IXDD404PI/404SI/404SI-16
Pin Configurations
1 EN A SO8 (SI) 8 PIN DIP (PI) 2 IN A 3 GND 4 IN B I X D D 4 0 4 EN B 8 OUT A 7 VCC 6 OUT B 5 SO16 (SI-16)
Pin Description
SYMBOL EN A IN A GND IN B OUT B VCC OUT A EN B FUNCTION A Channel Enable A Channel Input Ground B Channel Input B Channel Output Supply Voltage A Channel Output B Channel Enable DESCRIPTION The Channel A enable pin. This pin, when driven low, disables the A Channel, forcing a high impedance state to the A Channel Output. A Channel Input signal-TTL or CMOS compatible. The system ground pin. Internally connected to all circuitry, this pin provides ground reference for the entire chip. This pin should be connected to a low noise analog ground plane for optimum performance. B Channel Input signal-TTL or CMOS compatible. B Channel Driver output. For application purposes, this pin is connected, through a resistor, to Gate of a MOSFET/IGBT. Positive power-supply voltage input. This pin provides power to the entire chip. The range for this voltage is from 4.5V to 25V. A Channel Driver output. For application purposes, this pin is connected, through a resistor, to Gate of a MOSFET/IGBT. The Channel B enable pin. This pin, when driven low, disables the B Channel, forcing a high impedance state to the B Channel Output.
Note 1: Operating the device beyond parameters with listed "absolute maximum ratings" may cause permanent damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling and assembling this component.
Figure 2 - Characteristics Test Diagram
VIN
3
IXDD404PI/404SI/404SI-16
Typical Performance Characteristics
Fig. 3
40 35 50 30 40 25
Rise Time vs. Supply Voltage
Fig. 4
60
Fall Time vs. Supply Voltage
Rise Time (ns)
CL=4700 pF 20 15 10 5 0 8 10 12 14 16 18 200 pF 1800 pF
Fall Time (ns)
30 CL=4700 pF 20 1800 pF 10 200 pF
0 8 10 12 14 16 18
Supply Voltage (V)
Fig. 5
25
Supply Voltage (V)
Fig. 6
80 70 8V
Rise And Fall Times vs. Temperature CL=18V VCC=18V
Rise Time vs. Load Capacitance
20
60 50
10V
Rise Time (ns)
Time (ns)
15
tF tR
12V 40 30 20 10 18V 14V 16V
10
5
0 -40 -20 0 20 40 60 80 100 120
0 0k
2k
4k
6k
8k
10k
Temperature (C)
Fig. 7
100 90 80
2.8
Load Capacitance (pF)
Fig. 8
3.2
Fall Time vs. Load Capacitance
8V
Max / Min Input vs. Temperature VCC=18V CL=1nF
3.0 Minimum Input High
70
Fall Time (ns)
60 50 40
10V 12V
Max / Min Input (V)
2.6 2.4 2.2 Maximum Input Low 2.0 1.8
18V 30 20 10 0 0k 14V 16V
2k
4k
6k
8k
10k
1.6 -60
-40
-20
0
20
40
60
80
100
Load Capacitance (pF)
4
Temperature (oC)
IXDD404PI/404SI/404SI-16
Fig. 9
100
Supply Current vs. Load Capacitance Vcc=18V
Fig. 10
100
Supply Current vs. Frequency Vcc=18V
80 10
CL= 1800 pF
Supply Current (mA)
60
Supply Current (mA)
1000 pF 200 pF 1
2 MHz 40
1 MHz
500 KHz
20
100 kHz 50 kHz 10 kHz
0.1
0 0.1k
0.01 1.0k 10.0k 1 10 100 1000
Load Capacitance (pF)
Fig. 11
100
Frequency (kHz)
Fig. 12
100
Supply Current vs. Load Capacitance Vcc=12V
Supply Current vs. Frequency Vcc=12V
80 10 CL= 1800 pF
Supply Current (mA)
60
Supply Current (mA)
1000 pF 1 200 pF
2 MHz 40
1 MHz
500 KHz
0.1
20 100 kHz 50 kHz 10 kHz 1.0k 10.0k
0 0.1k
0.01 1 10 100 1000
Load Capacitance (pF)
Fig. 13
100
Frequency (kHz)
Fig. 14
100
Supply Current vs. Load Capacitance Vcc=8V
Supply Current vs. Frequency Vcc=8V
80 10 CL= 1800 pF
Supply Current (mA)
60
Supply Current (mA)
1000 pF 1 200 pF
40
2 MHz
1 MHz
500 KHz
0.1
20
100 kHz 50 kHz 10 kHz 0.01 1.0k 10.0k 1 10 100 1000
0 0.1k
Load Capacitance (pF)
5
Frequency (kHz)
IXDD404PI/404SI/404SI-16
Fig. 15
50
Propagation Delay vs. Supply Voltage CL=1800pF VIN=5V@1kHz
Fig. 16
60
Propagation Delay vs. Input Voltage CL=1800pF VCC=15V
50 40
Propagation Delay (ns)
tONDLY
30
Propagation Delay (ns)
tONDLY
40
tOFFDLY
20
30
tOFFDLY
20
10
10
0 8 10 12 14 16 18
0 0 2 4 6 8 10 12
Supply Voltage (V)
Fig. 17
60 55
Input Voltage (V)
Fig. 18
0.26
Propagation Delay Times vs. Temperature CL=1800pF VCC=18V
Quiescent Supply Current vs. Temperature VCC=18V VIN=5V@1kHz CL=1000pF
45
tONDLY
Quiescent Vcc Input Current (mA)
50
0.24
0.22
Time (ns)
40 35 30 25 20 15 10 -40 -20 0 20 40 60 80 100 120
tOFFDLY
0.20
0.18
0.16
0.14 -40 -20 0 20 o 40 60 80
Temperature (C)
Fig. 19
6
Temperature ( C)
Fig. 20
6
P Channel Output Current Vs. Temperature VCC=18V, CL=1000pF
N Channel Output Current Vs. Temperature VCC=18V, CL=1000pF
5
N Channel Output Current (A)
-40 -20 0 20 40 o 60 80 100
P Channel Output Current (A)
5
4
4
3
3 -40 -20 0 20 40 o 60 80 100
Temperature ( C)
Temperature ( C)
6
IXDD404PI/404SI/404SI-16
Fig. 21
14
Enable Threshold vs. Supply Voltage
Fig. 22
5
High State Output Resistance vs. Supply Voltage
12
10
8
6
4
2
0 8 10 12 14 16 18 20 22 24 26
High State Output Resistance (Ohm)
4
Enable Threshold (V)
3
2
1
0 8 10 15 20 25
Supply Voltage (V)
Fig. 23
3.0
Supply Voltage (V)
Low-State Output Resistance Vs. Supply Voltage
Fig. 24
0
Vcc vs. P Channel Output Current
Low-State Output Resistance (Ohms)
2.0
P Channel Output Current (A)
8 10 15 20 25
-2
-4
1.0
-6
0.0
-8 8 10 15 20 25 30
Supply Voltage (V)
Vcc
Fig. 25
8
VCC vs. N Channel Output Current
Figure 26 - Typical Application Short Circuit di/dt Limit
N Channel Output Current (A)
6
4
2
0 8 10 15 20 25 30
Vcc
7
IXDD404PI/404SI/404SI-16
APPLICATIONS INFORMATION
Short Circuit di/dt Limit
A short circuit in a high-power MOSFET such as the IXFN100N20, (20A, 1000V), as shown in Figure 26, can cause the current through the module to flow in excess of 60A for 10s or more prior to self-destruction due to thermal runaway. For this reason, some protection circuitry is needed to turn off the MOSFET module. However, if the module is switched off too fast, there is a danger of voltage transients occuring on the drain due to Ldi/dt, (where L represents total inductance in series with drain). If these voltage transients exceed the MOSFET's voltage rating, this can cause an avalanche breakdown. The IXDD404 has the unique capability to softly switch off the high-power MOSFET module, significantly reducing these Ldi/dt transients. Thus, the IXDD404 helps to prevent device destruction from both dangers; over-current, and avalanche breakdown due to di/dt induced over-voltage transients. The IXDD404 is designed to not only provide 4A per output under normal conditions, but also to allow it's outputs to go into a high impedance state. This permits the IXDD404 output to control a separate weak pull-down circuit during detected overcurrent shutdown conditions to limit and separately control dVGS/dt gate turnoff. This circuit is shown in Figure 27. Referring to Figure 27, the protection circuitry should include a comparator, whose positive input is connected to the source of the IXFD100N20. A low pass filter should be added to the input of the comparator to eliminate any glitches in voltage caused by the inductance of the wire connecting the source resistor to ground. (Those glitches might cause false triggering of the comparator). The comparator's output should be connected to a SRFF(Set Reset Flip Flop). The flip-flop controls both the Enable signal, and the low power MOSFET gate. Please note that CMOS 4000series devices operate with a VCC range from 3 to 15 VDC, (with 18 VDC being the maximum allowable limit). A low power MOSFET, such as the 2N7000, in series with a resistor, will enable the IXFN100N20 gate voltage to drop gradually. The resistor should be chosen so that the RC time constant will be 100us, where "C" is the Miller capacitance of the IXFN100N20. For resuming normal operation, a Reset signal is needed at the SRFF's input to enable the IXDD404 again. This Reset can be generated by connecting a One Shot circuit between the IXDD408 Input signal and the SRFF restart input. The One Shot will create a pulse on the rise of the IXDD404 input, and this pulse will reset the SRFF outputs to normal operation. When a short circuit occurs, the voltage drop across the lowvalue, current-sensing resistor, (Rs=0.005 Ohm), connected between the MOSFET Source and ground, increases. This triggers the comparator at a preset level. The SRFF drives a low input into the Enable pin disabling the IXDD404 output. The SRFF also turns on the low power MOSFET, (2N7000). In this way, the high-power MOSFET module is softly turned off by the IXDD404, preventing its destruction.
+
Figure 27 - Application Test Diagram
Ld 10uH
-
VB
IXDD404 VCC VCCA IN EN
+ -
Rd 0.1ohm Rg OUT Rsh 1600ohm 1ohm
High_Power IXFN100N20
VCC
+ -
VIN
DGND SUB Rs Low_Power 2N7002/PLP R+ 10kohm Ls 20nH
One ShotCircuit Rcomp 5kohm NOT1 CD4049A Ros 1Mohm Cos 1pF Q R REF NAND CD4011A NOT2 CD4049A Ccomp 1pF 0 Comp LM339 + V+ V+ -
C+ 100pF
NOT3 CD4049A EN
NOR1 CD4001A
S
NOR2 CD4001A
SR Flip-Flop
8
IXDD404PI/404SI/404SI-16
Supply Bypassing and Grounding Practices, Output Lead inductance
When designing a circuit to drive a high speed MOSFET utilizing the IXDD404, it is very important to keep certain design criteria in mind, in order to optimize performance of the driver. Particular attention needs to be paid to Supply Bypassing, Grounding, and minimizing the Output Lead Inductance. Say, for example, we are using the IXDD404 to charge a 2500pF capacitive load from 0 to 25 volts in 25ns. Using the formula: I= V C / t, where V=25V C=2500pF & t=25ns we can determine that to charge 2500pF to 25 volts in 25ns will take a constant current of 2.5A. (In reality, the charging current won't be constant, and will peak somewhere around 4A). SUPPLY BYPASSING In order for our design to turn the load on properly, the IXDD404 must be able to draw this 2.5A of current from the power supply in the 25ns. This means that there must be very low impedance between the driver and the power supply. The most common method of achieving this low impedance is to bypass the power supply at the driver with a capacitance value that is a magnitude larger than the load capacitance. Usually, this would be achieved by placing two different types of bypassing capacitors, with complementary impedance curves, very close to the driver itself. (These capacitors should be carefully selected, low inductance, low resistance, high-pulse current-service capacitors). Lead lengths may radiate at high frequency due to inductance, so care should be taken to keep the lengths of the leads between these bypass capacitors and the IXDD404 to an absolute minimum. GROUNDING In order for the design to turn the load off properly, the IXDD404 must be able to drain this 2.5A of current into an adequate grounding system. There are three paths for returning current that need to be considered: Path #1 is between the IXDD404 and it's load. Path #2 is between the IXDD404 and it's power supply. Path #3 is between the IXDD404 and whatever logic is driving it. All three of these paths should be as low in resistance and inductance as possible, and thus as short as practical. In addition, every effort should be made to keep these three ground paths distinctly separate. Otherwise, (for instance), the returning ground current from the load may develop a voltage that would have a detrimental effect on the logic line driving the IXDD404. OUTPUT LEAD INDUCTANCE Of equal importance to Supply Bypassing and Grounding are issues related to the Output Lead Inductance. Every effort should be made to keep the leads between the driver and it's load as short and wide as possible. If the driver must be placed farther than 2" from the load, then the output leads should be treated as transmission lines. In this case, a twisted-pair should be considered, and the return line of each twisted pair should be placed as close as possible to the ground pin of the
TTL to High Voltage CMOS Level Translation
The enable (EN) input to the IXDD404 is a high voltage CMOS logic level input where the EN input threshold is 1/2 VCC, and may not be compatible with 5V CMOS or TTL input levels. The IXDD404 EN input was intentionally designed for enhanced noise immunity with the high voltage CMOS logic levels. In a typical gate driver application, VCC =15V and the EN input threshold at 7.5V, a 5V CMOS logical high input applied to this typical IXDD404 application's EN input will be misinterpreted as a logical low, and may cause undesirable or unexpected results. The note below is for optional adaptation of TTL or 5V CMOS levels. The circuit in Figure 28 alleviates this potential logic level misinterpretation by translating a TTL or 5V CMOS logic input to high voltage CMOS logic levels needed by the IXDD404 EN input. From the figure, VCC is the gate driver power supply, typically set between 8V to 20V, and VDD is the logic power supply, typically between 3.3V to 5.5V. Resistors R1 and R2 form a voltage divider network so that the Q1 base is positioned at the midpoint of the expected TTL logic transition levels. A TTL or 5V CMOS logic low, VTTLLOW=~<0.8V, input applied to the Q1 emitter will drive it on. This causes the level translator output, the Q1 collector output to settle to VCESATQ1 + VTTLLOW=<~2V, which is sufficiently low to be correctly interpreted as a high voltage CMOS logic low (<1/3VCC=5V for VCC =15V given in the IXDD404 data sheet.) A TTL high, VTTLHIGH=>~2.4V, or a 5V CMOS high, V5VCMOSHIGH=~>3.5V, applied to the EN input of the circuit in Figure 28 will cause Q1 to be biased off. This results in Q1 collector being pulled up by R3 to VCC=15V, and provides a high voltage CMOS logic high output. The high voltage CMOS logical EN output applied to the IXDD404 EN input will enable it, allowing the gate driver to fully function as a 4 Amp output driver. The total component cost of the circuit in Figure 28 is less than $0.10 if purchased in quantities >1K pieces. It is recommended that the physical placement of the level translator circuit be placed close to the source of the TTL or CMOS logic circuits to maximize noise rejection.
Figure 28 - TTL to High Voltage CMOS Level Translator
CC (From Gate Driver Power Supply)
10K
R3
V DD
(From Logic Power Supply) 3.3K R1 Q1 2N3904 3.3K R2
High Voltage CMOS EN Output
(To IXDD404 EN Input)
driver, and connect directly to the ground terminal of the load.
or TTLInput)
9
IXDD404PI/404SI/404SI-16
Ordering Information
P art N um b er IX D D 4 0 4 P I IX D D 4 0 4 S I IX D D 4 0 4 S I-1 6 P ac ka ge T y pe 8 -P in P D IP 8 -P in S O IC 1 6 -P in S O IC T em p. R an ge -4 0 C to + 8 5 C -4 0 C to + 8 5 C -4 0 C to + 8 5 C
NOTE: Mounting or solder tabs on all packages are connected to ground
IXYS Corporation 3540 Bassett St; Santa Clara, CA 95054 Tel: 408-982-0700; Fax: 408-496-0670 e-mail: sales@ixys.net IXYS Semiconductor GmbH Edisonstrasse15 ; D-68623; Lampertheim Tel: +49-6206-503-0; Fax: +49-6206-503627 e-mail: marcom@ixys.de Directed Energy, Inc. An IXYS Company 2401 Research Blvd. Ste. 108, Ft. Collins, CO 80526 Tel: 970-493-1901; Fax: 970-493-1903 e-mail: deiinfo@directedenergy.com
10
Doc #9200-0226 R4

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